Study and Design of 40 nW CMOS Temperature Sensor for Space Applications

Abhishek Pandey, Vijay Nath


In this paper, a novel CMOS temperature sensors based on sub-threshold MOS operation has been presented, which is designed for space and satellite applications. This proposed CMOS temperature sensor is enunciated good linearity between temperatures range from -55OC to 150OC with inaccuracy of 0.85 OC/V. This circuit is operated at supply 1V and static power consumption 40nW is achieved. The proposed circuit is based on the MOS threshold voltage and mobility. There are two type of sensor output in presented circuit first, voltage proportional to absolute temperature (PTAT) due to threshold voltage and second, negative temperature coefficient (NTC) due to mobility. This circuit is designed & simulated using Cadence analog & digital system design tools UMC90nm CMOS technology. The layout area of the circuit is 17.213μm  6.655μm. This is a low power and longer battery life for harsh environment, wireless sensor network applications etc. 


CMOS; complementary metal oxide semiconductor; VLSI; very large scale integration circuit; SOI: system on insulator; PTAT: proportional to absolute temperature; NTC: negative temperature coefficient, SoC: system on chip.

Full Text:



Martinez Brito, Juan Pablo, Aliain Rabacijs. CMOS Smart Temperature sensor for RFID application. 26th Symposium on Integrated Circuits and Systems Design (SBCCI), Curitiba. 2013: 1-6.

Bakker, A. and Huijsing,J. Micropower CMOS temperature sensor with digital output. IEEE Journal Solid State Circuits. 1996; 933-937.

Andre L. Aita, Michiel A.P. Pertijs, Low Power CMOS Smart Temperature Sensor with a batch-calibrated of inaccuracy of ±0.25O C (±3σ) from 70 O C to 130O C. IEEE Sensors Journal. 2013; 13(5): 1840-1848.

M.A.P. Pertijs, K.A.A.Golam Chowdhury, and A. Hassibi. An On-chip Temperature sensor with a self-Discharging Diode in 32-nm SOI CMOS. IEEE transactions on circuits and systems. 2012; 59(9): 568-572.

M.A.P. Pertijs, K. A. A. Makinwa, and J. H. Huijsing. A CMOS smart temperature sensor with 3σ inaccuracy of ±0.1OC from -55OC to 125 OC. IEEE J. Solid-State Circuits. 2005; 40(12): 2805–2815.

Kamran Souri A CMOS Temperature Sensor with a Voltage-Calibrated Inaccuracy of ±0.15O C (3σ) From 55 O C to 125 O C. IEEE Journal of Solid-State Circuits. 2013; 48(1): 292-301.

P. Chen, C.-C. Chen, C.-C. Tsai, and W.-F. Lu. A time-to-digital converter-based CMOS smart temperature sensor. IEEE J. Solid-State Circuits. 2005; 40(4): 1642–1648.

P. Chen, C.-C. Chen, T.-K. Chen, and S.-W. Chen. A time domain mixed-mode temperature sensor with digital set-point programming. IEEE Custom Integration. Circuits Conference. San Jose. 2006: 821-824.

K. Woo et al. Dual-DLL-based CMOS all-digital temperature sensor for microprocessor thermal monitoring. IEEE International conference Solid-State Circuits Conference - Digest of Technical Papers, ISSCC. San Francisco, CA. 2009: 68-69.

Kisso Kim 366Ks/s 1.09-nJ 0.0013mm2 Frequency to Digital Converter based CMOS Temperature Sensor Utilizing Multiphase Clock. IEEE Transactions on Very Large Scale Integration (VLSI). 2012; 21(10): 1950-1954.

Sewook Hwang, Jabeom Koo, A 0.008 mm2 500µW 469 kS/s Frequency-to-Digital Converter Based CMOS Temperature Sensor with Process Variation Compensation. IEEE Transactions on Circuits and Systems Journal. 2013; 60(9): 2241-2248.

Basab Datta. On Chip thermal sensing in deep submicron CMOS. Masters Theses. Amherst: University of Massachusetts, Amherst; 2007.

Phillip E. Allen & Douglas R. Holberg CMOS analog circuit design. 3rd Edition. Oxford. Oxford University press. 2004: 72-159.

Behazad Razavi Design of Analog CMOS Integrated circuits. New York. Tata McGraw-Hill Publishing Company Limited. 2002.

D.A.Pucknell & Kamran Eshraghian. Basic VLSI Design. 3rd Edition. New Delhi. Prentice-Hall of India Private Limited. 2008.

A.Pandey, D.Yadav, R.Singh, Vijay Nath. Design of ultra low power CMOS temperature sensor for space application. IJAREEIE. 2013; 2(8): 4117-4125.

V. Nath, L. K. Singh, K.S. Yadav. Design and Development of CMOS Bandgap Voltage Reference Circuit in VLSI. International Journal of Systemics, Cybernetics and Informatics. 2007; 2: 71-75.

Vijay Nath, K.S. Yadav, L.K. Singh. Modeling, Simulation and Layout Design of CMOS Signal Conditioning Circuit with M/NEMS Sensors in VLSI. 16th National Seminar on Physics & Technology of Sensors (NSPTS16) organized by Department of Physics, University of Lucknow, India from 11-13 Feb. 2011.

J. Altet et al. Sensing temperature in CMOS circuits for thermal testing. Proceeding of 22nd IEEE VLSI test symposium. 2004: 179-184.

Eran Socher, Salomon Michel Beer and Yael Neimirovsky. Temperature sensitive of SOI-CMOS transistor for use in uncooled thermal sensing. IEEE transaction on electron devices. 2005; 52(12): 2784-2790.

Weste, Neil H.E. and Harris, David (2005). CMOS VLSI Design: A Circuits and Systems Perspective, 3rd Ed. New Delhi. Prentice-Hall of India Private Limited.



Creative Commons License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

TELKOMNIKA Telecommunication, Computing, Electronics and Control
ISSN: 1693-6930, e-ISSN: 2302-9293
Universitas Ahmad Dahlan, 4th Campus
Jl. Ringroad Selatan, Kragilan, Tamanan, Banguntapan, Bantul, Yogyakarta, Indonesia 55191
Phone: +62 (274) 563515, 511830, 379418, 371120
Fax: +62 274 564604