Research on Silicon-based Planar Spiral Inductance Coil Based on Microelectromechanical System

Gang Li, Xiaofeng Zhao, Dianzhong Wen, Yang Yu

Abstract


This paper describes a kind of silicon-based plane spiral inductance coil ,whose layout size and fabrication technology process are given. The production of inductance coil adopts the method of an internal down-lead produced by ohm contact electrode which is formed by heavily boron- diffused and the Al evaporated on the surface of N-type high resistivity silicon wafer. Processing the silicon cup on The back of the silicon wafer using Microelectromechanical system (MEMS) technology, on the basis of thickness reduction of the inductance coil substrate, the porous array substrate of about 5μm thickness is obtained by laser drilling on the underside of the silicon cup, which reduces the vortex of substrate, and greatly improves the Q value of inductance coil. Analyze the effects of series resistance of the coil and metal layer thickness on the Q value in the condition of low frequency and high frequency, and Ansys software is used to simulate the inductance coil current density and magnetic induction intensity, to determine the optimum substrate thickness of inductance coil. The silicon-based plane spiralind inductance coil has the advantages of simple manufacturing process and is compatible with IC technology, compared with other manufacturing method, so it has a wide application prospect.

Keywords


MEMS; silicon-based planar spiral inductance coil; Ansys; Q value

Full Text:

PDF

References


Wen Dianzhong. Sensitivity Analysis of Junction Field Effect-Pressure Halltron, Review of Scientific Instrument. 1995; 66 (1): 251-255.

Zhao Xiaofeng, Wen Dianzhong, Zhuang Cuicui, et al. Fabrication and Characteristics of the Magnetic Field Sensors Based on Nano-Polysilicon Thin-Film Transistors. Journal of Semiconductors. 2013; 34(3):036001(1-6).

Zhao Xiaofeng, Wen Dianzhong, Li Gang. Fabrication and characteristics of the nc-Si/c-Si heterojunction MOSFETs pressure sensor. Sensors. 2012; 12(5): 6369-6379.

Yoon ,J B, Choi Y S, Kim B, et al. CMOS Compatible Surface-Micromachined Suspended-Spiral Inductors for Multi-GHz Silicon RFICs. IEEE Electron Device Letters. 2002; 23(10): 591-593.

Gradolph, Friedberger, Muller, et al.environments on piezoresistive pressure sensorImpact of high-g and high vibration performance. Sensors and Actuators. A, Physical. 2009; 150(1): 69-77.

Jiang Qi-feng Li zheng-fang. Modeling and Analysis of Spiral Inductors for Si-Based RFIC’s. ACTA ELECTRONIC SINICA. 2002; 30(8): 1119-1121.

Mengran Liu, Guojun Zhang, Zeming Jian,et al. Design of Array MEMS Vector Vibration Sensor in the Location of Pipeline Internal Inspector. TELKOMNIKA. 2014; 12(9): 6651- 6657.

Zhang Zhi-yong, Hai Chao-he. High Q-Factor On-chip Spiral Inductors for Bulk Silicon CMOS RF IC’S. Microelectronics. 2003; 33(1): 15-18.

Waugh W H, Gallacher B J, Burdess J S. A High-Sensitivity Resonant Sensor Realized Through the Exploitation of Nonlinear Dynamic Behavior. Mess Sci Technol. 2011; 22(10): 105-202.

Achmad Widodo, Latief Rozaqi, Ismoyo Haryanto, et al. Development of Wireless Smart Sensor for Structure and Machine Monitoring. TELKOMNIKA. 2013; 11(2): 417-424.

Peng Guanbin, Liu Jingquan, Wand Longfei, et al. Circuit Design of an Implantable MEMS Pressure Sensor System. Nanotechnology and Precision Engineering. 2013; 11(1): 90–95.




DOI: http://doi.org/10.12928/telkomnika.v13i4.1818

Refbacks

  • There are currently no refbacks.


Creative Commons License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

TELKOMNIKA Telecommunication, Computing, Electronics and Control
ISSN: 1693-6930, e-ISSN: 2302-9293
Universitas Ahmad Dahlan, 4th Campus
Jl. Ringroad Selatan, Kragilan, Tamanan, Banguntapan, Bantul, Yogyakarta, Indonesia 55191
Phone: +62 (274) 563515, 511830, 379418, 371120
Fax: +62 274 564604

View TELKOMNIKA Stats